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 GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-534H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-534H4 has greatly improved long-distance characteristics as well as significantly increased its range of applicability .
SEE NOTE 2 1.00 (.040) 7.62 (.300) 5.05 (.200)
MIE-534H4
Unit: mm (inches)
Package Dimensions
5.47 (.215)
5.90 (.230)
FLAT DENOTES CATHODE
Features
l
Ultra-High radiant intensity High response speed Standard T-1 3/4 ( 5mm) package Peak wavelength P =850 nm Radiant angle : 30
0.50 TYP. (.020)
23.40 MIN (.920)
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l
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1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3
A
C
Application
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Data communication SIR
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
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Absolute Maximum Ratings '@ TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10s pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds
o o o o
Unit mW A mA V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-534H4
Optical-Electrical Characteristics @ TA=25oC
Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Rise Time Fall Time
Relative Radiant Intensity
1
Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA IF=50mA IF=50mA
Symbol Ie VF IR 2 1/2 Tr Tf
Min.
Typ . 4.2 1.5 850 30 30 20 30
Max. 1.8 100
Unit mW/sr V nm nm deg . nsec nsec
Typical Optical-Electrical Characteristic Curves
0.5
0 750
Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION
3
850
950
100
Forward Current (mA)
Output Power To Value IF=20mA
80 60 40 20 0 0.8
2.5 2 1.5 1 0.5 0 -40 -20 0 20 40
o
Forward Voltage (V) FIG.2 FORWARD CURRENT VS. FORWARD VOLTAGE
1.2
1.6
2.0
2.4
2.8
60
Ambient Temperature TA ( C ) FIG.3 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE
0 10 20
Output Power Relative To Value at IF=20mA
5
Relative Radiant Intensity
4 3 2 1
30 40 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6
1.0 0.9 0.8
0 0 20 40 60 80 100
Forward Current (mA) FIG.4 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Unity Opto Technology Co., Ltd.
11/17/2000


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